Title :
Cathodoluminescence study of nitride transistor structures characterisation of native oxide
Author :
Goldys, E.M. ; Paskova, T. ; Sheely, J. ; Schaff, W. ; Eastman, L.F.
Author_Institution :
Div. of Inf. & Commun. Sci., Macquarie Univ., Sydney, NSW, Australia
Abstract :
Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.
Keywords :
III-V semiconductors; cathodoluminescence; gallium compounds; junction gate field effect transistors; wide band gap semiconductors; 5 eV; GaN; HFET transistors; accelerating voltage; cathodoluminescence; deep UV band; spatially resolved images; temperature resolved images; transistor structures; Acceleration; Artificial intelligence; Gallium nitride; HEMTs; MODFETs; Rough surfaces; Surface roughness; Surface treatment; Temperature; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022909
