DocumentCode :
2041325
Title :
Characterization and Field Emission Properties of Lanthanum Monosulfide Nanodot and Nanowire Arrays Deposited by Pulsed Laser Deposition on Self-assembled Nanoporous Al2O3 Matrix
Author :
Cahay, M. ; Garre, K. ; Semet, V. ; Vu Thien Binh ; Lockwood, D.J. ; Fraser, J.W. ; Bandyopadhyay, S. ; Pramanik, S. ; Fairchild, S. ; Grazulis, L.
Author_Institution :
Dept. of Electr. Comput. & Eng. Comput. Sci., Cincinnati Univ., OH
fYear :
2006
fDate :
38899
Firstpage :
139
Lastpage :
140
Abstract :
Successful growth of lanthanum monosulfide (LaS) nanodot and nanowire arrays has been performed by pulsed laser deposition (PLD) using self-assembled nanoporous alumina templates containing pores about 50 nm wide and 200-300 nm deep. The arrays were characterized by X-ray diffraction, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and scanning anode field emission microscopy (SAFEM). The array of LaS nanodots grows selectively at boundaries between different regions of the alumina film with local hexagonal symmetry of pores. The density of these dots is about 109 /cm2. Cross sectional FE-SEM showed that LaS nanowires also grow inside the pores with a density of 1010/cm2 , which is equal to the pore density of the templates. The field emission properties of the LaS nanodots grown on top of the alumina templates were measured using SAFEM. A typical current-voltage characteristic is shown. Using the conventional Fowler-Nordheim relation, the work function of the LaS nanodots has been extracted from the slope of the plot ln(J/F2) vs 1/F, where J is the field emission current density and F is the local applied field. This leads to an outstanding, reproducible effective work function value of ~1 eV for the LaS nanodots. The threshold for an emission current density of 1 mA/cm2 occurs around a 150 V/mum which is considerably lower than the 230 V/mum threshold value reported recently for LaS thin films
Keywords :
X-ray diffraction; atomic force microscopy; current density; electron field emission; lanthanum compounds; nanotechnology; nanowires; pulsed laser deposition; scanning electron microscopy; work function; AFM; Al2O3; FE-SEM; Fowler-Nordheim relation; LaS; X-ray diffraction; atomic force microscopy; current density; current-voltage characteristic; field emission; field emission scanning electron microscopy; hexagonal symmetry; lanthanum monosulfide nanodot arrays; lanthanum monosulfide nanowire arrays; pore density; pulsed laser deposition; scanning anode field emission microscopy; self-assembled nanoporous Al2O3 matrix; work function; Aluminum oxide; Atomic force microscopy; Lanthanum; Nanoporous materials; Optical arrays; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Self-assembly; X-ray lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335396
Filename :
4134498
Link To Document :
بازگشت