Title :
Effect of dopants in the spin-on glass layer on the bandgap shift in GaAs/AlGaAs and InGaAs/AlGaAs intermixed quantum wells
Author :
van der Heijden, R.W. ; Fu, L. ; Tan, H.H. ; Jagadish, C. ; Dao, L.V. ; Gal, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Impurity free vacancy disordering (IFVD) is induced in both GaAs/AlGaAs and InGaAs/AlGaAs QWs using undoped, Ga-doped and P-doped spin-on glass encapsulant layers. IFVD has been studied for different annealing and pre-baking temperatures, using low temperature photoluminescence (PL). The P-doped and undoped silica layers behave similarly in promoting IFVD, inducing large energy shifts. The Ga-doped silica layer suppresses IFVD, which is explained by the reduction of Ga outdiffusion from the QW structure into the oxide layer.
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; energy gap; gallium; gallium arsenide; glass; indium compounds; phosphorus; photoluminescence; semiconductor quantum wells; silicon compounds; spectral line shift; vacancies (crystal); Ga outdiffusion; Ga-doped layers; Ga-doped silica layer; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs-AlGaAs; InGaAs/AlGaAs; P-doped layers; QWs; SiO2:Ga,P; annealing; bandgap shift; dopants; impurity free vacancy disordering; intermixed quantum wells; low temperature photoluminescence; pre-baking temperatures; spin-on glass layer; undoped silica layers; vacancy disordering; Australia; Gallium arsenide; Glass; Impurities; Indium gallium arsenide; Photonic band gap; Plasma temperature; Rapid thermal annealing; Silicon compounds; Temperature distribution;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022912
