Ion-implanted InP for ultrafast photodetector applications

Author

Carmody, C. ; Boudinov, Henri ; Tan, H.H. ; Jagadish, C. ; Dao, L.V. ; Gal, M.

Author_Institution

Dept. of Electronic Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2000

fDate

2000

Firstpage

153

Lastpage

156

Abstract

In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200°C were implanted with MeV P⁺ ions up to doses of 1 × 10¹⁶ cm^-2. Samples were subsequently annealed at temperatures between 400°C and 700°C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication.

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; annealing; carrier lifetime; indium compounds; ion implantation; photodetectors; photoluminescence; semiconductor epitaxial layers; time resolved spectra; 200 degC; 400 to 700 degC; Hall effect; InP; annealing; carrier lifetime; double crystal X-ray diffraction; ion implantation; p-type epilayer; semi-insulating InP; time resolved photoluminescence; ultrafast photodetector; Annealing; Charge carrier lifetime; Hall effect; Indium phosphide; Performance evaluation; Photodetectors; Photoluminescence; Temperature; Time measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022914

Filename

1022914