Investigation of LDD n-MOSFET hot-carrier degradation with high gate-to-drain transverse field stressing at cryogenic temperature

The effect of high gate-to-drain transverse field stressing at cryogenic temperature is characterized through gate-to-drain capacitance measurement. A larger degradation effect is observed at low temperature measurement because the effect of Coulomb scattering by interface charge on mobility degradation is more significant and carrier concentration is more sensitive to surface potential variation. Also, more acceptor states are ionized causing increase in interface charges. For low stressing temperature, more trapped holes and interface states are created. These holes trapping are due to shallow-level trap centers where the captured holes will thermally re-emit as the device is warmed to room temperature.