• DocumentCode
    2041582
  • Title

    Application prospects for aluminum bases in gigahertz devices

  • Author

    Sokol, V.A. ; Yakovtseva, V.A. ; Parkun, V.M.

  • Author_Institution
    Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    732
  • Lastpage
    733
  • Abstract
    Based on analysis of the microstrip line parameters, arguments for aluminum bases with a dielectric layer of anodic aluminum oxide for gigahertz devices are adduced. Taking into consideration that aluminum is a good structural material, it is concluded that aluminum bases are very promising for microelectronic microwave devices operating at high frequencies and powers.
  • Keywords
    aluminium compounds; integrated circuits; microwave devices; AlO2; aluminum bases; anodic aluminum oxide; dielectric layer; gigahertz devices; microelectronic microwave devices; microstrip line parameters; structural material; Aluminum; Dielectrics; Electronic mail; Microelectronics; Microstrip; Microwave FET integrated circuits; Microwave devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653036
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2041582