DocumentCode :
2041621
Title :
Al-Al2O3-Ni-Cu structures for microwave microstrip lines
Author :
Shimanovich, D.L. ; Hamolka, P.V.
Author_Institution :
Belarusian state Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
736
Lastpage :
737
Abstract :
Based on Ni chemical deposition and Cu electrochemical deposition up to 30 μm thick onto large-size Al bases with Al2O3 one-sided dielectric coating obtained by electrochemical anodic process, technological modes for Al-Al2O3-Ni-Cu structures formation were developed. Electrophysical parameters for Al-Al2O3-Ni-Cu structures were studied and their promising application for microstrip lines of microwave systems passive part was demonstrated.
Keywords :
aluminium compounds; copper compounds; electrochemical electrodes; elemental semiconductors; microstrip lines; microwave devices; nickel compounds; oxygen compounds; copper chemical deposition; electrochemical anodic process; electrophysical parameters; microwave microstrip lines; microwave systems; nickel chemical deposition; one-sided dielectric coating; structures formation; technological modes; Aluminum oxide; Dielectrics; Educational institutions; Electronic mail; Microstrip; Microwave technology; Nickel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6653038
Link To Document :
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