Title :
Hydrogenation of ZnS passivation for HgCdTe
Author :
White, J.K. ; Pal, R. ; Musca, C.A. ; Dell, J.M. ; Faraone, L. ; Burke, P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
The physical and electrical effects of exposing ZnS passivation to a H2/CH4 reactive ion etch (RIE) plasma are examined. Using secondary ion mass spectrometry (SIMS) and capacitance-voltage (CV) analysis, hydrogen is shown to penetrate through the ZnS and accumulate on the ZnS side of the ZnS/HgCdTe interface, causing a reduction in the positive fixed charge density, possibly due to binding at sulphur vacancy sites. CV results show a reduction in the average and spread of fixed interface charge (Qf), however the interface trap density (Qit) is unchanged. With a 2 hour 80°C bake, SIMS profiles indicate a change in the ZnS/HgCdTe interface with movement of H, Cd, Hg and Te species.
Keywords :
II-VI semiconductors; cadmium compounds; capacitance; chemical interdiffusion; electron traps; hydrogen; hydrogenation; interface states; mass spectroscopic chemical analysis; mercury compounds; passivation; plasma materials processing; secondary ion mass spectra; semiconductor heterojunctions; sputter etching; zinc compounds; 2 hour; 80 C; CV results; H2; H2/CH4 reactive ion etch plasma; HgCdTe; RIE plasma; SIMS; SIMS profiles; ZnS passivation; ZnS/HgCdTe interface; ZnS:H-HgCdTe; capacitance-voltage analysis; electrical effects; hydrogenation; interface trap density; physical effects; positive fixed charge density; secondary ion mass spectrometry; sulphur vacancy sites; Capacitance-voltage characteristics; Etching; Hydrogen; Mass spectroscopy; Mercury (metals); Passivation; Plasma applications; Plasma density; Tellurium; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022920
