Integration of a Dose Control Circuit with a Vertically Aligned NanoFiber Field Emission Device

Author

Rahman, T. ; Islam, S.K. ; Vijayaraghavan, R. ; Gundman, T. ; Eliza, S.A. ; Hossain, A. B M ; Blalock, B. ; Baylor, L.R. ; Bigelow, T.S. ; Ericson, M.N. ; Gardner, W.L. ; Moore, J.A. ; Randolph, S.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN

fYear

2006

fDate

38899

Firstpage

161

Lastpage

162

Abstract

This paper discusses the complete integration of the prototype digital electrostatic focused e-beam array direct-write lithography (DEAL) device with the dose control circuitry (DCC). The DCC regulates charge emission from the vertically aligned carbon nanofibers (VACNFs) and prevents resists from being over exposed during the e-beam lithography process. The emission of electrons from the VACNF tip requires relatively high voltage. The I-V characteristic of a typical VACNF based device is presented with threshold voltage of ~75 V. The DCC built using a standard 5 V digital CMOS process cannot handle such voltage levels

Keywords

CMOS digital integrated circuits; carbon fibres; electron beam lithography; electron field emission; electrostatics; integrated circuit technology; vacuum microelectronics; VACNF based device; charge emission; digital electrostatic focused e-beam array direct-write lithography device; dose control circuitry; electron beam lithography; electron emission; threshold voltage; vertically aligned carbon nanofibers; CMOS process; Carbon dioxide; Circuits; Electron emission; Electrostatics; Lithography; Nanoscale devices; Prototypes; Resists; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335408

Filename

4134510