The role of interstitial manganese in manganese-doped ferromagnetic semiconductors

Author

Erwin, Steven C. ; Petukhov, A.G.

Author_Institution

Center for Comput. Mater. Sci., Naval Res. Lab., Washington, DC, USA

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the high Curie temperature occurring for 0.5 holes per substitutional Mn.

Keywords

Curie temperature; III-V semiconductors; adsorption; density functional theory; ferromagnetic materials; gallium arsenide; impurity distribution; interstitials; magnetic semiconductors; manganese; metal-insulator transition; semimagnetic semiconductors; Curie temperature; GaAs:Mn; Mn acceptors; density functional theory; electron donor; impurity band model; interstitial manganese; low energy adsorption; manganese doped ferromagnetic semiconductors; metal-insulator transition; nonequilibrium conditions; Bonding; Bridges; Kinetic energy; Manganese;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230274

Filename

1230274