DocumentCode
2041706
Title
Efficient spin injection in metal-insulator-semiconductor (MIS) light emitting diodes (invited)
Author
De Boeck, J. ; Motsnyi, V.F. ; Van Dorpe, P. ; Van Roy, W. ; Safarov, V.I. ; Borghs, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we review our results on the MIS (Metal- InsulatorSemiconductor) spin-source approach including some results on a NiMnSb/Schottky barrier spin-source.
Keywords
III-V semiconductors; MIS devices; Schottky barriers; aluminium compounds; antimony alloys; gallium arsenide; light emitting diodes; magnetic semiconductors; manganese alloys; nickel alloys; spin polarised transport; GaAs-AlGaAs; NiMnSb; NiMnSb/Schottky barrier spin-source; metal-insulator-semiconductor light emitting diodes; metal-insulator-semiconductor spin-source; spin injection; Artificial intelligence; Electrons; Fabrication; Light emitting diodes; Magnetic semiconductors; Metal-insulator structures; Molecular beam epitaxial growth; Optical polarization; Spin polarized transport; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230276
Filename
1230276
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