DocumentCode :
2041729
Title :
Injection and detection of spin-polarized currents at ferromagnet/semiconductor Schottky contacts
Author :
Albrecht, J.D. ; Smith, D.L.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fYear :
2003
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we present a more complete picture of the Schottky barrier useful for both injection and detection. The transport properties of the interface are described using a spin-dependent interface resistance, resulting for example from an interfacial-tunneling region.
Keywords :
Schottky barriers; ferromagnetic materials; interface magnetism; metal-insulator boundaries; semiconductor materials; spin polarised transport; ferromagnet/semiconductor Schottky contacts; interface transport properties; interfacial-tunneling region; spin-dependent interface resistance; spin-polarized current detection; Contact resistance; Doping profiles; Electron optics; Equations; Face detection; Optical devices; Optical sensors; Schottky barriers; Spin polarized transport; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
Type :
conf
DOI :
10.1109/INTMAG.2003.1230277
Filename :
1230277
Link To Document :
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