DocumentCode
2041729
Title
Injection and detection of spin-polarized currents at ferromagnet/semiconductor Schottky contacts
Author
Albrecht, J.D. ; Smith, D.L.
Author_Institution
Los Alamos Nat. Lab., NM, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we present a more complete picture of the Schottky barrier useful for both injection and detection. The transport properties of the interface are described using a spin-dependent interface resistance, resulting for example from an interfacial-tunneling region.
Keywords
Schottky barriers; ferromagnetic materials; interface magnetism; metal-insulator boundaries; semiconductor materials; spin polarised transport; ferromagnet/semiconductor Schottky contacts; interface transport properties; interfacial-tunneling region; spin-dependent interface resistance; spin-polarized current detection; Contact resistance; Doping profiles; Electron optics; Equations; Face detection; Optical devices; Optical sensors; Schottky barriers; Spin polarized transport; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230277
Filename
1230277
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