• DocumentCode
    2041740
  • Title

    Technological methods for fabrication of Al2O3-plates as bases for microwave structures

  • Author

    Shimanovich, D.L.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    742
  • Lastpage
    743
  • Abstract
    Technological methods for the formation of 100-400 μm thick free Al2O3-plates by a two-sided through anodization and subsequent bipolar anodization for the application as bases for microwave strip structures were designed. High shape stability and crack resistance after high-temperature (> 500 °C) treatments, ~20-23 W/m·K thermal conductivity, ~7.2-7.4 relative dielectric constant were obtained.
  • Keywords
    anodisation; plates (structures); bipolar anodization; crack resistance; fabrication; high temperature; microwave strip structures; microwave structures; relative dielectric constant; shape stability; technological methods; Aluminum oxide; Educational institutions; Electronic mail; Fabrication; Microwave technology; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2041740