DocumentCode
2041742
Title
Quantum transport modeling in anisotropic semiconductors using Wigner function formulation
Author
Kim, Kyoung-Youm ; Lee, Byoungho
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear
2000
fDate
2000
Firstpage
198
Lastpage
201
Abstract
The Wigner transport equation is formulated in anisotropic semiconductor quantum wells. We suggest a formulation in which we can use the conventional Wigner transport equation solvers developed assuming isotropic materials for the actual numerical calculation. The three-dimensional Wigner function involving effective mass tensor can be reduced into one-dimensional form which involves only one diagonal effective mass tensor element and the original three-dimensional Wigner function is given as the convolution of the one-dimensionally reduced Wigner function with a newly defined function related to the off-diagonal effective mass tensor elements.
Keywords
Clebsch-Gordan coefficients; Ge-Si alloys; effective mass; elemental semiconductors; quantum well devices; resonant tunnelling diodes; semiconductor device models; semiconductor materials; semiconductor quantum wells; silicon; Si-SiGe; Si/SiGe double-barrier RTD; Wigner function formulation; Wigner transport equation; anisotropic semiconductor quantum well; convolution; effective mass tensor; quantum transport modeling; Anisotropic magnetoresistance; Convolution; Couplings; Effective mass; Electrons; Equations; Optical scattering; Semiconductor materials; Tensile stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022925
Filename
1022925
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