Title :
Microwave properties of semiconductors
Author :
Poplavko, Yu.M. ; Kazmirenko, V.A.
Author_Institution :
Nat. Tech. Univ. of Ukraine "Kiev Polytech. Inst.", Kiev, Ukraine
Abstract :
The paper presents study of frequency dependencies of dielectric permittivity and loss in the most important semiconductor materials, such as silicon and gallium arsenide, at microwave range, as well as their temperature dependencies. It is shown that dielectric permittivity exhibit practically no dispersion at microwaves, while increases with rising temperature.
Keywords :
III-V semiconductors; dielectric losses; dielectric materials; elemental semiconductors; gallium arsenide; microwave materials; permittivity; silicon; GaAs; Si; dielectric loss; dielectric permittivity; frequency dependence; gallium arsenide; microwave properties; semiconductor materials; silicon; temperature dependence; Dielectrics; Electronic mail; Gallium arsenide; Microwave circuits; Permittivity; Silicon; Temperature dependence;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
