Title :
Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system
Author :
Gluszak, Edward A. ; Hinckley, Steven
Author_Institution :
Sch. of Eng. & Math., Edith Cowan Univ., Churchlands, WA, Australia
Abstract :
Polycrystalline CdS films, with thicknesses typically 0.005 to 0.5 μm, have been chemically deposited from an ammonia-thiourea system. The influence of reaction parameters (i.e. concentration of reactants and pH) on film growth rate were determined and modelled. The results of a kinetic study are presented, resulting in the formulation of a growth rate formula. The deposited film properties are dependent on temperature, stirring, relative concentrations of the solution reactants, type of reactants, and solution pH. Thin film growth is thermally activated with an activation energy EA∼5×1023 eV/mol.
Keywords :
II-VI semiconductors; cadmium compounds; liquid phase deposited coatings; liquid phase deposition; semiconductor growth; semiconductor thin films; 0.005 to 0.5 micron; CdS; NH3; activation energy; ammonia-thiourea reaction system; chemical solution deposition; film growth rate; film thickness; pH; polycrystalline CdS film; reactant concentration; reaction parameters; ultrathin chemically-deposited CdS films; Cadmium compounds; Chemical engineering; Chemical processes; Kinetic theory; Optical films; Substrates; Surface morphology; Temperature; Transistors; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022931
