DocumentCode
2041953
Title
High-linearity and variable gate-voltage swing dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors
Author
Lour, W.S. ; Tsai, Min-Kang ; Chen, K.-C. ; Wu, Y.-W. ; Tan, S.W. ; Yang, Y.J.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan
fYear
2000
fDate
2000
Firstpage
226
Lastpage
229
Abstract
InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate voltage dependence of transconductance for the first equivalent gate with several Vgs2 shows that the gate voltage swing available is in the range of 0 to 4.5 V.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0 to 4.5 V; GaAs delta sheet; In0.5Ga0.5P/In0.2Ga0.8As; InGaP-InGaAs; PHEMT profile; composite channel; device linearity; dual-gate PHEMT; gate voltage dependence; gate-voltage swing; pseudomorphic high electron mobility transistors; single-gate PHEMT; transconductance; undoped InGaAs layer; Electric variables control; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Linearity; MODFETs; PHEMTs; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022933
Filename
1022933
Link To Document