High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

A new heterostructure field-effect transistor (HFET) using an n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p⁺-In_0.49Ga_0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a 1×100 μm² device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate that devices with n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier-gate structure are suitable for high-power circuit applications.