Title :
Temperature-dependent characteristics of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistor
Author :
Pan, Hsi-jen ; Yen, Chih-Hung ; Yu, Kuo-Hui ; Lin, Kun-Wei ; Lin, Kuan-Po ; Chiou, Wen-Huei ; Chuang, Hung-Ming ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Temperature-dependent DC performances of InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temperature from 25 toward -196°C, an irregular temperature behavior of current gain has been investigated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; 25 to -196 degC; DC performance; HBT; InGaAlAs base layer; InGaAlAs collector layer; InP-In0.53Ga0.34Al0.13As; InP/In0.53Ga0.34Al0.13As; InP/InGaAlAs; common-emitter breakdown voltage; current gain; heterojunction bipolar transistor; output conductance; temperature-dependent characteristics; Aluminum alloys; Electric breakdown; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Optoelectronic devices; Photonic band gap; Substrates; Temperature distribution;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022936
