Negative Differential Conductance Observed in Electron Field Emission from Band Gap Modulated A-C Nanolayers

Author

Tsang, W.M. ; Henley, S.J. ; Stolojan, V. ; Silva, S.R.P.

Author_Institution

Nano-electron. Center, Surrey Univ., Guildford

fYear

2006

fDate

38899

Firstpage

199

Lastpage

200

Abstract

The field emission properties of an amorphous carbon (a-C) based quantum well structures are investigated. The a-C nanolayers are grown by pulsed laser ablation of a graphite target on highly doped n-type (100) Si wafers. The band gap of these layers are modulated through laser fluence variation. A negative differential conductance peak at 15 V/mum (F_p) and an abrupt increase in emission current at 25 V/mum (F_s) are observed. An analysis of these anomalous properties is made

Keywords

amorphous semiconductors; carbon; electric admittance; electron field emission; energy gap; laser ablation; nanostructured materials; quantum wells; (100) Si wafers; C; Si; band gap; band gap modulated amorphous carbon layers; electron field emission; emission current; graphite target; laser fluence; negative differential conductance; pulsed laser ablation; quantum wells; Amorphous materials; Atomic beams; Electron emission; Iron; Laser ablation; Optical pulses; Photonic band gap; Pulsed laser deposition; Resonant tunneling devices; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335427

Filename

4134529