DocumentCode
2042210
Title
Current transport mechanisms in n-CdO/p-InSe photosensitive heterojunctions
Author
Kudrynskyi, Z.R.
Author_Institution
Frantsevich Inst. for Problems of Mater. Sci., Chernivtsi, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
780
Lastpage
781
Abstract
n-CdO/p-InSe photosensitive heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin film with n-type conductivity onto freshly cleaved p-InSe single-crystal substrates. Temperature dependences of the I-V characteristics of the heterojunctions are studied and current transport mechanisms through the potential barrier at forward and back biases are identified.
Keywords
cadmium compounds; indium compounds; semiconductor heterojunctions; sputtering; CdO-InSe; DC reactive magnetron sputtering; I-V characteristics; n-type conductivity; photosensitive heterojunctions; single-crystal substrates; temperature dependences; thin film; transport mechanisms; Crystals; Heterojunctions; Lattices; Sputtering; Substrates; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653059
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