DocumentCode :
2042241
Title :
Resistive switching in TiN/HfO2/Ti/TiN MIM devices for future nonvolatile memory applications
Author :
Walczyk, Ch. ; Schroeder, T. ; Lukosius, M. ; Fraschke, M. ; Fox, A. ; Wolansky, D. ; Tillack, B. ; Wenger, Ch.
Author_Institution :
IHP, 15236 Frankfurt (Oder), Germany
fYear :
2009
fDate :
25-28 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Bipolar resistive switching in TiN/HfO2/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >105 s and a cycling endurance in dc sweep mode >102. By controlling either the set current Iset or by setting an appropriate stop voltage Vstop, the devices hold the potential for multilevel operation. The results suggest that HfO2-based MIM devices with Si CMOS compatible metal electrodes may be well suited for future embedded nonvolatile memory applications.
Keywords :
Argon; CMOS process; CMOS technology; Electrodes; Hafnium oxide; MIM devices; Nonvolatile memory; Plasma applications; Plasma measurements; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
Type :
conf
DOI :
10.1109/NVMT.2009.5445490
Filename :
5445490
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2042241
بازگشت