Title :
Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode
Author :
Tsubouchi, Hiroshi ; Sakuma, Sadayoshi ; Neo, Yoichiro ; Mimura, Hidenori ; Sakai, Toshikatsu ; Ushirozawa, Mizumoto ; Yamamoto, Toshihiro
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu
Abstract :
This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V
Keywords :
chromium; electrodes; field emitter arrays; silicon compounds; silicon-on-insulator; Cr-SiO2-Si; double-gated Spindt-type field emitter; emission current; extraction gate electrode; extraction gate voltage; silicon-on-insulator wafer; Apertures; Chromium; Crosstalk; Electrodes; Electron beams; Fabrication; Flat panel displays; Focusing; Laboratories; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335436
