• DocumentCode
    2042317
  • Title

    Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode

  • Author

    Tsubouchi, Hiroshi ; Sakuma, Sadayoshi ; Neo, Yoichiro ; Mimura, Hidenori ; Sakai, Toshikatsu ; Ushirozawa, Mizumoto ; Yamamoto, Toshihiro

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V
  • Keywords
    chromium; electrodes; field emitter arrays; silicon compounds; silicon-on-insulator; Cr-SiO2-Si; double-gated Spindt-type field emitter; emission current; extraction gate electrode; extraction gate voltage; silicon-on-insulator wafer; Apertures; Chromium; Crosstalk; Electrodes; Electron beams; Fabrication; Flat panel displays; Focusing; Laboratories; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
  • Conference_Location
    Guilin
  • Print_ISBN
    1-4244-0401-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2006.335436
  • Filename
    4134538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2042317