DocumentCode
2042473
Title
Fabrication and Emission Properties of Single Crystal Lanthanum Hexaboride Tip
Author
Wang, Xiaoju ; Lin, Zulun ; Chen, Zexiang ; Qi, Kangcheng ; Jiang, Yadong ; Yu, Haibo
Author_Institution
Sch. of Opto-electron. Inf., Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear
2006
fDate
38899
Firstpage
227
Lastpage
228
Abstract
Field emission cathode single tip was fabricated by electro-chemical etching method. The materials used here were single crystal lanthanum hexaboride (LaB6), polycrystalline lanthanum hexaboride, molybdenum, and tungsten, respectively. Electron emission characteristics of single crystal LaB6 cold cathode were studied in a diode test cell in vacuum system. When the distance between the single crystal LaB6 tip and the anode was 0.2mm, current density of 1.25times104 A/cm2 was obtained at a pressure of 3.4times10-4 Pa with DC-3000 V bias applied to the anode. Results show that single crystal LaB6 cold cathode, due to its high current density, low evaporation rates, high stability, strong ability of antipoisoning and long life, is an excellent electron source, particularly fitting for traveling-wave tubes, klystrons and other large vacuum apparatus
Keywords
cathodes; current density; electrochemistry; electron field emission; etching; lanthanum compounds; 3.4E-4 Pa; 3000 V; LaB6; antipoisoning; current density; diode test cell; electrochemical etching method; electron emission properties; electron source; evaporation rates; field emission cathode single tip; klystrons; large vacuum apparatus; molybdenum; polycrystalline lanthanum hexaboride; single crystal cold cathode; single crystal lanthanum hexaboride; single crystal lanthanum hexaboride tip; traveling-wave tubes; tungsten; vacuum system; Anodes; Cathodes; Crystalline materials; Current density; Diodes; Electron emission; Etching; Fabrication; Lanthanum; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335441
Filename
4134543
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