InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells

Author

Lin, Ching-Fuh ; Wu, Bing-Ruey ; Laih, Lih-Wen ; Shih, Tien Tsorng

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

2000

Firstpage

336

Lastpage

339

Abstract

Novel behavior of laser diodes (LDs) and superluminescent diodes (SLDs) fabricated on substrates with nonidentical quantum wells has been discovered. Mirror-imaged nonidentical quantum well (QW) lasers/superluminescent diodes have been designed, fabricated, and measured. Nonuniform carrier distribution inside multiple quantum wells is further verified experimentally. Measured characteristics also show that electrons, instead of holes, are the dominant carrier affecting carrier distribution. The sequence of the nonidentical QW is also shown to have significant influence on device characteristics, showing very different carrier distribution in each sequence.

Keywords

III-V semiconductors; electron density; electron mobility; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; superluminescent diodes; InGaAsP-InP; InGaAsP/InP laser diodes/superluminescent diodes; designed; fabricated; nonidentical quantum wells; nonuniform carrier distribution; Charge carrier processes; Diode lasers; Indium phosphide; Laser modes; Quantum well devices; Semiconductor diodes; Semiconductor lasers; Substrates; Superluminescent diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022957

Filename

1022957