Title :
Postgrowth wavelength tuning of optoelectronic devices by ion implantation induced quantum well intermixing
Author :
Fu, L. ; Tan, H.H. ; Jagadish, C. ; Dao, L.V. ; Gal, M. ; Li, Ning ; Lu, Wei ; Shen, S.C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
As one of the postgrowth band gap engineering technique, proton implantation induced quantum well intermixing has been used to tune the wavelength of two different optoelectronic devices, the quantum well laser and quantum well infrared photodetector. Large wavelength shifts have been obtained for both devices after implantation and rapid thermal annealing, without significant degradation of performance.
Keywords :
energy gap; infrared detectors; interface states; ion beam mixing; ion implantation; optoelectronic devices; photodetectors; quantum well devices; quantum well lasers; rapid thermal annealing; semiconductor doping; semiconductor quantum wells; ion implantation; large wavelength shifts; optoelectonic devices; optoelectronic devices; postgrowth band gap engineering technique; postgrowth wavelength tuning; proton implantation; quantum well infrared photodetector; quantum well intermixing; quantum well laser; rapid thermal annealing; Annealing; Australia; Chemical lasers; Gallium arsenide; Ion implantation; Laser tuning; Photonic band gap; Protons; Pulse measurements; Quantum well lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022959
