Postgrowth wavelength tuning of optoelectronic devices by ion implantation induced quantum well intermixing

Author

Fu, L. ; Tan, H.H. ; Jagadish, C. ; Dao, L.V. ; Gal, M. ; Li, Ning ; Lu, Wei ; Shen, S.C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2000

fDate

2000

Firstpage

344

Lastpage

347

Abstract

As one of the postgrowth band gap engineering technique, proton implantation induced quantum well intermixing has been used to tune the wavelength of two different optoelectronic devices, the quantum well laser and quantum well infrared photodetector. Large wavelength shifts have been obtained for both devices after implantation and rapid thermal annealing, without significant degradation of performance.

Keywords

energy gap; infrared detectors; interface states; ion beam mixing; ion implantation; optoelectronic devices; photodetectors; quantum well devices; quantum well lasers; rapid thermal annealing; semiconductor doping; semiconductor quantum wells; ion implantation; large wavelength shifts; optoelectonic devices; optoelectronic devices; postgrowth band gap engineering technique; postgrowth wavelength tuning; proton implantation; quantum well infrared photodetector; quantum well intermixing; quantum well laser; rapid thermal annealing; Annealing; Australia; Chemical lasers; Gallium arsenide; Ion implantation; Laser tuning; Photonic band gap; Protons; Pulse measurements; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022959

Filename

1022959