Numerical analysis of void-induced thermal effects on GaAs/AlGaAs high power quantum well laser diodes

Author

Gity, F. ; Ahmadi, V. ; Noshiravani, M. ; Abedi, K.

Author_Institution

Dept. of Electr. Eng., Tarbiat Modares Univ., Tehran, Iran

fYear

2006

fDate

20-22 March 2006

Firstpage

1

Lastpage

6

Abstract

Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T₀) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping concept is also demonstrated.

Keywords

III-V semiconductors; aluminium compounds; carrier density; finite difference methods; gallium arsenide; leakage currents; microassembling; quantum well lasers; thermal conductivity; thermo-optical effects; voids (solid); GaAs-AlGaAs; carrier density; die attachment solder layers; finite difference method; high power quantum well laser diodes; leakage currents; microscopic voids; photon density; thermal conductivity; thermal mode hopping; threshold currents; time-dependent axial variations; void-induced thermal effects; Cavity resonators; Charge carrier density; Mathematical model; Radiative recombination; Temperature; Temperature dependence; finite difference method; high power laser diode; hot spot; mode hopping; thermal behavior; thermal rollover; void; wavelength shift;

fLanguage

English

Publisher

ieee

Conference_Titel

GCC Conference (GCC), 2006 IEEE

Conference_Location

Manama

Print_ISBN

978-0-7803-9590-9

Electronic_ISBN

978-0-7803-9591-6

Type

conf

DOI

10.1109/IEEEGCC.2006.5686220

Filename

5686220