DocumentCode
2043031
Title
Preparation of Pb(Zr,Ti)O3 ferroelectric thin films by a pulsed laser ablation technique
Author
Jingping, Xu ; Tiecheng, Bai ; Chengwu, An ; Li Xing Jiao
Author_Institution
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
1991
fDate
11-16 May 1991
Firstpage
560
Lastpage
563
Abstract
Ferroelectric thin films of Pb(Zr,Ti)O3 have been fabricated on polished silicon wafers by a pulsed laser ablation technique at substrate temperature of 100-200°C. The ferroelectric properties of the thin films can be greatly improved by a post-deposition laser annealing. Some factors which affect the quality of thin films were investigated. The structures of thin films were analyzed by X-ray diffraction. The Curie temperature and hysteresis loops of PZT ferroelectric thin films were measured
Keywords
X-ray diffraction examination of materials; dielectric hysteresis; ferroelectric Curie temperature; ferroelectric thin films; laser beam annealing; lead compounds; 100 to 200 C; Curie temperature; PZT; PbZrO3TiO3; X-ray diffraction; ferroelectric properties; ferroelectric thin films; hysteresis loops; laser annealing; polished Si wafers; preparation; pulsed laser ablation technique; structures; substrate temperature; Annealing; Ferroelectric materials; Laser ablation; Optical pulses; Semiconductor thin films; Silicon; Temperature; Transistors; X-ray diffraction; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-0012-2
Type
conf
DOI
10.1109/ECTC.1991.163933
Filename
163933
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