Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si

Author

Lin, Ching-Fug ; Chen, Miin-Jang ; Liang, Eih-Zhe ; Liu, W.T. ; Chang, S.T. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

2000

Firstpage

403

Lastpage

406

Abstract

Room temperature electroluminescence from metal-insulator-semiconductor (MIS) structures on Si was observed. Several types of MIS structures such as Al/SiO₂/Si, ITO/SiO₂/Si, and a mechanically pressed ITO/Si contact, has been investigated. Both band-edge and visible electroluminescence are observed from the ITO/SiO₂/Si structures. The devices based on the Al/SiO₂/Si structure exhibit efficient band-edge electroluminescence. Electroluminescence near the silicon bandgap energy is also achieved from MIS structures using an innovative mechanically pressed ITO/Si contact. Optical phonons, interface roughness, localized carriers and impact ionization are used to explain radiative recombination in MIS structures.

Keywords

MIS structures; aluminium; electroluminescence; impact ionisation; indium compounds; interface phonons; interface roughness; radiative lifetimes; silicon compounds; 300 K; Al-SiO₂-Si; Al/SiO₂/Si; ITO-Si; ITO-SiO₂-Si; ITO/SiO₂/Si; InSnO-Si; InSnO-SiO2-Si; MIS structure; Si; band-edge EL; electroluminescence; impact ionization; interface roughness; localized carriers; mechanically pressed ITO/Si contact; metal-insulator-semiconductor structure; optical phonons; radiative recombination; silicon bandgap energy; visible EL; Electroluminescence; Electroluminescent devices; Impact ionization; Indium tin oxide; Metal-insulator structures; Phonons; Photonic band gap; Radiative recombination; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022975

Filename

1022975