DocumentCode
2043111
Title
Simulation of resonant-tunneling and single-electron devices with the use of modified models
Author
Abramov, I.I. ; Baranoff, A.L. ; Kolomeytseva, N.V. ; Romanova, I.A. ; Shcherbakova, I.Yu.
Author_Institution
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
846
Lastpage
847
Abstract
The influence of potential barriers width deviation on IV-characteristics of RTD is investigated using the suggested modified two-band combined model. A multi-island structure was simulated using a modified model in case of account of spatial quantization on islands of single-electron devices. It enables one to achieve a satisfactory agreement of simulation results with experimental data.
Keywords
resonant tunnelling devices; single electron devices; IV-characteristics; RTD; modified two-band combined model; multiisland structure; potential barrier width deviation; resonant-tunneling device simulation; single-electron device simulation; spatial quantization; Electronic mail; Gallium arsenide; Nanoelectronics; Periodic structures; Resonant tunneling devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653091
Link To Document