Title :
Rapid thermal annealing of NTD Si
Author :
Mo, Li ; Karmar, T. ; Alexiev, D. ; Butcher, K.S.A.
Author_Institution :
Australian Nucl. Sci. & Technol. Organ., Menai, NSW, Australia
Abstract :
Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.
Keywords :
electrical resistivity; elemental semiconductors; neutron effects; rapid thermal annealing; semiconductor doping; silicon; DLTS; Si; furnace annealing; neutron transmutation doped wafers; rapid thermal annealing; resistivity; Australia; Conductivity; Furnaces; Impurities; Lattices; Neutrons; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022977
