Title :
Aluminum oxide based nanostructures for impedance nanoelectronics
Author :
Abramov, I.I. ; Krylova, H.V. ; Lipnevich, I.V. ; Orekhovskaya, T.I.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Fluorescence and Raman light scattering in dielectric nanostructures based on aluminum oxide have been investigated. Ultrathin metal-containing conducting Langmuir-Blodgett films deposited on the anodic alumina shield the action of strong electrical fields and minimize electrical capacity of a near-electrode Helmholtz double electrically charged layer.
Keywords :
Langmuir-Blodgett films; Raman spectra; alumina; dielectric thin films; electrical conductivity; fluorescence; nanostructured materials; Al2O3; Raman light scattering; aluminum oxide based nanostructures; anodic alumina; dielectric nanostructures; electrical capacity; electrical fields; fluorescence; impedance nanoelectronics; near-electrode Helmholtz double electrically charged layer; ultrathin metal-containing conducting Langmuir-Blodgett films; Aluminum oxide; Educational institutions; Electronic mail; Films; Fluorescence; Laser excitation; Nanostructures;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
