• DocumentCode
    2043159
  • Title

    Aluminum oxide based nanostructures for impedance nanoelectronics

  • Author

    Abramov, I.I. ; Krylova, H.V. ; Lipnevich, I.V. ; Orekhovskaya, T.I.

  • Author_Institution
    Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    851
  • Lastpage
    852
  • Abstract
    Fluorescence and Raman light scattering in dielectric nanostructures based on aluminum oxide have been investigated. Ultrathin metal-containing conducting Langmuir-Blodgett films deposited on the anodic alumina shield the action of strong electrical fields and minimize electrical capacity of a near-electrode Helmholtz double electrically charged layer.
  • Keywords
    Langmuir-Blodgett films; Raman spectra; alumina; dielectric thin films; electrical conductivity; fluorescence; nanostructured materials; Al2O3; Raman light scattering; aluminum oxide based nanostructures; anodic alumina; dielectric nanostructures; electrical capacity; electrical fields; fluorescence; impedance nanoelectronics; near-electrode Helmholtz double electrically charged layer; ultrathin metal-containing conducting Langmuir-Blodgett films; Aluminum oxide; Educational institutions; Electronic mail; Films; Fluorescence; Laser excitation; Nanostructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2043159