Title :
Structure and properties of TiO2:Fe thin films prepared by the sol-gel technique
Author :
Chien, Nguyen Dang ; Vuong, D.D. ; An, N.H. ; Wlodarski, W. ; Li, Y.X.
Author_Institution :
Int. Training Inst. for Mater. Sci., Hanoi, Vietnam
Abstract :
TiO2 thin films doped with Fe have been prepared by using the sol-gel process on silicon substrates. A metal-organic precursor solution for coating silicon substrates was synthesized using a Ti alkoxide derivative iron salt and isopropanol as a solvent. Acetylacetone was used as an inhibitor of derivative iron hydrolysis-condensation reactions. The structure of the films was investigated by X-ray diffraction and Raman scattering analysis. The electrical characterization of the films is reported.
Keywords :
Raman spectra; X-ray diffraction; differential scanning calorimetry; iron; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; titanium compounds; DSC; Raman scattering; Si; Ti alkoxide derivative iron salt; TiO2:Fe; X-ray diffraction; acetylacetone; hydrolysis-condensation reactions; isopropanol; metal-organic precursor solution; resistivity; silicon substrates; sol-gel technique; thin films; Coatings; Inhibitors; Iron; Materials science and technology; Silicon; Solvents; Substrates; Temperature sensors; Titanium; Transistors;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022980
