DocumentCode
2043407
Title
A novel high gain silicon based spin transistor
Author
Dennis, C.L. ; Sirisathitkul, C. ; Ensell, G.J. ; Gregg, J.F. ; Thompson, S.M.
Author_Institution
Clarendon Lab., Oxford Univ., UK
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we fabricate a novel high gain silicon based spin transistor and measured the minority carrier transport in the silicon. When measured with a magnetic field applied in the plane of the transistor and perpendicular to the direction of the current flow, the I-V characteristics show a variation in the collector current causing the transistor to behave as a magnetically tunable device with a field dependent gain.
Keywords
field effect transistors; photolithography; silicon; I-V characteristics; Si; collector current; field dependent gain; high gain silicon based spin transistor; magnetically tunable device; minority carrier transport; transistor fabrication; Computer science; Electron emission; Land mobile radio; Large Hadron Collider; Polarization; Shape; Silicon; Temperature; Tunneling magnetoresistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230337
Filename
1230337
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