Title :
Ultrafast time-resolved photoluminescence measurements on InGaAs/GaAs quantum dots
Author :
Dao, L.V. ; Gal, M. ; Babinski, A. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
Time resolved photoluminescence (PL) on InGaAs/GaAs showed that the carrier dynamics is affected by two distinct factors: the capture of the photo-excited carriers into the quantum dot (QD) states and the carrier relaxation inside the dots. The ratio of these two components is a function of the excitation intensity. We also demonstrate the influence of the Auger-like scattering in the carrier relaxation process in InGaAs/GaAs quantum dots by analysing the intensity dependence of time resolved spectra.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectra; Auger-like scattering; InGaAs-GaAs; carrier dynamics; carrier relaxation; excitation intensity; photo-excited carriers; quantum dots; ultrafast time-resolved photoluminescence; Gallium arsenide; Indium gallium arsenide; Optical scattering; Photoluminescence; Physics; Quantum dots; Temperature distribution; Time measurement; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022985
