Title :
Electrical isolation of AlxGa1-xAs by proton irradiation
Author :
Lippen, T.v. ; Boudinov, H. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The evolution of sheet resistance (Rs) of n-type and p-type conductive AlxGa1-xAs layers (x=0.3, 0.6 and 1.0) during proton irradiation was investigated. The threshold dose (Dth) to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e. the temperature range for which the Rs is maintained at ≈109 Ω/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450°C. The temperature of ≈600°C is the upper limit for the n-type samples thermostability.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electric resistance; electron traps; gallium arsenide; isolation technology; proton effects; thermal stability; AlGaAs; electrical isolation; free carrier concentration; n-type layers; p-type layers; proton irradiation; sheet resistance; thermal stability; threshold dose; trap concentration; Atmospheric measurements; Current density; Doping; Electrical resistance measurement; Gallium arsenide; Ion beams; Protons; Rapid thermal annealing; Resistors; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022986
