Title :
Effects of polarisation on solar-blind AlGaN UV photodiodes
Author :
Kuek, J.J. ; Pulfrey, D.L. ; Nener, B.D. ; Dell, J.M. ; Parish, G. ; Mishra, U.K.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
The effects of spontaneous and strain induced polarisation, and incomplete dopant ionisation on the spectral responsivity of a Ga-faced p-GaN/i-Al0.33Ga0.67N/n-GaN photodiode structure are determined using a commercial finite element modelling package. It is shown that polarisation induced interface charges increase the barrier to carriers generated in the GaN regions of the diode, improving the solar-blindness of the diode by more than three orders of magnitude. In contrast, incomplete dopant ionisation has only a minor effect.
Keywords :
III-V semiconductors; aluminium compounds; finite element analysis; gallium compounds; p-i-n photodiodes; semiconductor device models; ultraviolet detectors; wide band gap semiconductors; GaN-Al0.33Ga0.67N-GaN; UV photodetector; finite element model; incomplete dopant ionisation; interface charge; p-GaN/i-Al0.33Ga0.67N/n-GaN photodiode; solar blindness; spectral responsivity; spontaneous polarisation; strain induced polarisation; Aluminum gallium nitride; Capacitive sensors; Diodes; Finite element methods; Ionization; Packaging; Photodiodes; Polarization; Semiconductor process modeling; Solar power generation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022989
