• DocumentCode
    2043529
  • Title

    Development of low temperature Chip-on-Flex (COF) bonding process of 100°C

  • Author

    Sun-Chul Kim ; Young-Ho Kim

  • Author_Institution
    Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    13-16 Dec. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Recently, many researchers have introduced low temperature bonding technology using Anisotropic conductive film (ACF) or Nonconductive adhesive (NCA). In their studies, the bonding temperature is in the range between 150°C and 200°C. In this study, we developed a Chip-on-Flex (COF) bonding process of 100°C by using Sn-Ag bumps and nonconductive film (NCF). Sn-Ag bumps were formed by electroplating and reflowed to form dome shape. The COF bonding was performed between Sn-Ag bumps and Cu/Polyimide film substrates using a thermo-compression bonder at 100°C for 5 s. The low temperature curable NCF was applied during the bonding process. The Sn-Ag bumps were deformed and direct contact was made between Sn-Ag bumps and Cu/PI substrate during thermo-compression bonding. The initial contact resistance of all joints was less than 30 mΩ, and no COF joints failed electrically. To evaluate reliability of COF joints, Temperature & Humidity (T&H) test (85°C/85% RH) was performed for 1000 hr. The contact resistance was increased during reliability test. However, the failed joints were not observed after T&H test. The contact resistance change will be discussed in terms of microstructure change in the COF joints.
  • Keywords
    adhesive bonding; electrical contacts; lead bonding; low-temperature techniques; polymer films; reliability; silver alloys; tin alloys; ACF; COF bonding process; COF joint reliability; Cu; NCA; NCF; Sn-Ag; T&H test; anisotropic conductive film; contact resistance; direct contact; low temperature chip-on-flex bonding process; nonconductive adhesive; nonconductive film; polyimide film substrates; reliability test; temperature & humidity testing; temperature 150 degC to 200 degC; temperature 85 degC; thermocompression bonding; time 5 s;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging (EMAP), 2012 14th International Conference on
  • Conference_Location
    Lantau Island
  • Print_ISBN
    978-1-4673-4945-1
  • Electronic_ISBN
    978-1-4673-4943-7
  • Type

    conf

  • DOI
    10.1109/EMAP.2012.6507904
  • Filename
    6507904