DocumentCode
2043536
Title
Diodes on gallium arsenide nanostructure
Author
Goncharuk, N.M. ; Karushkin, N.F. ; Orehovskiy, V.A. ; Malyshko, V.V.
Author_Institution
State Enterprise Res. Inst. “Orion”, Kiev, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
879
Lastpage
880
Abstract
The dependence of impedance of a diode on AlGaAs/GaAs nanostructure with tunnel injection of electrons through AlGaAs single potential barrier and their transit in GaAs drift layer vs. parameters of transit and barrier layers is investigated in a framework of small-signal theory. It has been shown that a negative conductance band of the diodes with injection delay time from three to nine tenth of a picosecond is in a submillimeter range. The dependence of a value and frequency of negative conductance maximum vs. diode parameters has been found.
Keywords
diodes; gallium arsenide; nanostructured materials; diode parameters; electrons; gallium arsenide nanostructure; injection delay time; negative conductance band; negative conductance maximum; single potential barrier; small signal theory; tunnel injection; Electronic mail; Gallium arsenide; Optimized production technology; Radio frequency; Semiconductor diodes; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653106
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