Dislocation configurations in strained single-heterostructure layers

Detailed force-balance considerations can lead to a description of the dislocation configuration within a strained layer. Dislocation configurations are of interest because critical thicknesses of epitaxially grown layers depend on the evolution of the configuration of threading dislocations. Moreover, it promises to shed light on investigations of critical thickness criteria for Multiple Quantum Well (MQW) structures. This paper reports a theoretical study of dislocation configurations in structures by examining the forces acting on a dislocation segment and developing governing equations to describe the equilibrium structure as a function of layer strain and thickness.