Title :
Optical and electronic properties of GaNAs/GaAs structures
Author :
Buyanova, I.A. ; Chen, W.M. ; Pozina, G. ; Hai, P.N. ; Thinh, N.Q. ; Goldys, E.M. ; Xin, H.P. ; Tu, C.W.
Author_Institution :
Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden
Abstract :
We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.
Keywords :
III-V semiconductors; cyclotron resonance; effective mass; gallium arsenide; gallium compounds; microwave-optical double resonance; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; time resolved spectra; GaNAs-GaAs; ODCR; ODMR; band alignment; compositional dependence; effective mass; heterostructures; optically detected cyclotron resonance; optically detected magnetic resonance; photoluminescence; recombination processes; time-resolved spectra; Cyclotrons; Electron optics; Gallium arsenide; Magnetic properties; Magnetic resonance; Nitrogen; Optical detectors; Photoluminescence; Spectroscopy; Spontaneous emission;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022995
