Title :
Two major factors determining frequency response of InP avalanche photodiode
Author :
Cho, S.R. ; Oh, K.S. ; Yang, S.K. ; Baek, J.M. ; Jang, D.H. ; Kim, T.I.
Author_Institution :
Optoelectronics Div., Samsung Electron., Suwon City, South Korea
Abstract :
In this paper, the frequency response limited by avalanche buildup time was calculated using a realistic model which reflects a zinc diffusion profile and includes a nonlocal multiplication theory. The dependency of a chip capacitance on the floating guard rings was also investigated. The trade-off relation between the edge gain suppression and the chip capacitance is addressed.
Keywords :
III-V semiconductors; avalanche photodiodes; frequency response; indium compounds; InP avalanche photodiode; InP:Zn; avalanche buildup time; chip capacitance; edge gain; floating guard ring; frequency response; nonlocal multiplication; zinc diffusion profile; Absorption; Avalanche photodiodes; Business communication; Capacitance; Cities and towns; Frequency response; Indium phosphide; Open systems; SONET; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1023001
