DocumentCode
2043911
Title
Two major factors determining frequency response of InP avalanche photodiode
Author
Cho, S.R. ; Oh, K.S. ; Yang, S.K. ; Baek, J.M. ; Jang, D.H. ; Kim, T.I.
Author_Institution
Optoelectronics Div., Samsung Electron., Suwon City, South Korea
fYear
2000
fDate
2000
Firstpage
519
Lastpage
522
Abstract
In this paper, the frequency response limited by avalanche buildup time was calculated using a realistic model which reflects a zinc diffusion profile and includes a nonlocal multiplication theory. The dependency of a chip capacitance on the floating guard rings was also investigated. The trade-off relation between the edge gain suppression and the chip capacitance is addressed.
Keywords
III-V semiconductors; avalanche photodiodes; frequency response; indium compounds; InP avalanche photodiode; InP:Zn; avalanche buildup time; chip capacitance; edge gain; floating guard ring; frequency response; nonlocal multiplication; zinc diffusion profile; Absorption; Avalanche photodiodes; Business communication; Capacitance; Cities and towns; Frequency response; Indium phosphide; Open systems; SONET; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1023001
Filename
1023001
Link To Document