DocumentCode :
2043930
Title :
Amorphous Silicon Nanowire Arrays Synthesized by Electric Field
Author :
Min, Yu Ling ; Chun, Zhu Chang ; Hui, Fan Xin ; Wen, Yan
Author_Institution :
Sch. of Electron. & Inf. Eng., Xi´´an Jiao Tong Univ.
fYear :
2006
fDate :
38899
Firstpage :
339
Lastpage :
340
Abstract :
Amorphous silicon nanowire arrays have been successfully prepared by thermal evaporation under electric field. The dependence on electric field of the growth of amorphous silicon nanowires is studied with the help of scanning electron microscope (SEM), energy disperse X-ray spectroscopy (EDX) attached to SEM, transmission electron microscopy (TEM). The results show that silicon nanowires grown along straight line and paralleled to each other are located in the middle of two knots. The formation of Si nanowire arrays is controlled by the charged cluster model. And, we suggested that this method can be applied to synthesize other kinds of nanowire arrays
Keywords :
X-ray chemical analysis; amorphous semiconductors; elemental semiconductors; nanowires; noncrystalline structure; scanning electron microscopy; semiconductor quantum wires; silicon; transmission electron microscopy; vacuum deposition; Si; amorphous silicon nanowire arrays; charged cluster model; energy disperse X-ray spectroscopy; scanning electron microscopy; thermal evaporation; transmission electron microscopy; Amorphous silicon; Chemical technology; Electrodes; Fluid flow; Furnaces; Powders; Scanning electron microscopy; Substrates; Temperature; Transmission electron microscopy; charged cluster model; electric field; silicon nanowire arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335207
Filename :
4134599
Link To Document :
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