Determination of the junction depth of a semiconductor device by the reconstruction of the charge collection probability

A new method of reconstructing the distribution φ(z) of the charge collection probability from the measured collection efficiency data is proposed. Direct reconstruction of φ(z) from the measured collection efficiency profile is usually performed by applying the Tikhonov regularization method, so as to obtain a stable solution of φ(z). In this paper, a simpler method of directly reconstructing φ(z) without applying the regularization method is proposed. The reconstructed φ(z) was used to determine the junction depths of semiconductor devices. Examples of the application of the method to data from a 2D device simulator Medici and published data are described.