The influence of hydrogen plasma and annealing on GaN film grown by plasma-assisted MOCVD

We have studied the influence of hydrogen plasma treatment and annealing on GaN mms grown by plasma-assisted metal organic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) pattern of GaN films grown without assistance of hydrogen plasma show misoriented polycrystalline structure, while those grown with the assistance of hydrogen plasma show a crystalline structure with (0001) orientation. Post-growth hydrogenation and annealing reduces the carrier concentration of fUms grown without hydrogen plasma, but does not give a significant effect for mms grown with the assistance of a hydrogen plasma.