Packaging of SiC-SBD for high temperature operation

Using wideband gap semiconductors (SiC, GaN) appears as possible solution to the growing demand for the development of high temperature, high frequencies power electronics. This will help downsizing the current Power Electronics systems and extend their range of operation conditions. The aim of this paper is to present the results obtained concerning the packaging of a full-wave rectifying bridge using SiC Schottky Barrier Diodes, capable to operate above 300°C. The diodes are rated 1200 V and 50 A. The proposed packaging is based on an insulating-gas encapsulation and stacking of the components. The rectifying function was tested by feeding a current trough the bridge at room temperature, and while applying high voltage in an insulating gas-filled heated chamber. Results show that the type of interconnection proposed can withstand at least 10 A and 200 V in rectifying conditions. Gas encapsulation allowed for an operation of the diodes under high voltage conditions up to 350°C even if at this temperature diode leakage current is too high to perform an appropriate rectification.