• DocumentCode
    2044074
  • Title

    Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

  • Author

    Bogatyrev, Yu.V. ; Lastovskiy, S.B. ; Korshunov, F.P. ; Kulgachev, V.I. ; Turtsevich, A.S. ; Shwedov, S.V. ; Malyshev, V.S. ; Yarmolik, A.M.

  • Author_Institution
    Sci.-Practical Mater. Res. Centre, Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    922
  • Lastpage
    923
  • Abstract
    The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60 gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC´ elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors´ parameters is carried out.
  • Keywords
    CMOS integrated circuits; MOSFET; cobalt; radiation effects; CMOS IC element isolation; Co60; LOCOS; MOS transistor parameters; STI; gamma-irradiation; radiation effects; radiation resistance; shallow trench isolation; size 0.35 mum; submicron CMOS integrated circuits; CMOS integrated circuits; Electronic mail; MOSFET; MOSFET circuits; Materials; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653127
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2044074