Title :
Radiation degradation of light-emitting diodes
Author :
Brzhezinskiy, V.A.
Author_Institution :
Sevastopol Nat. Univ. of Nucl. Energy & Ind., Sevastopol, Ukraine
Abstract :
The present paper concerns the comparative complex study of degradation kinetics of light-emitting diodes in the course of the long neutron and gamma irradiation and tests for non-failure operation at thermocurrent loadings without irradiation. Serially released devices on the basis of A3B5 connections (arsenide and gallium phosphide) and GaAlAs solid solutions were exposed to research.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; gamma-ray effects; light emitting diodes; neutron effects; radiation hardening (electronics); semiconductor device testing; solid solutions; A3B5 connections; GaAlAs; GaP; degradation kinetics; gamma irradiation; light-emitting diodes; neutron irradiation; nonfailure operation tests; radiation degradation; solid solutions; thermocurrent loadings; Degradation; Educational institutions; Electronic mail; Industries; Light emitting diodes; Radiation effects; Sensitivity;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
