Title :
Special purpose CMOS VLSI SRAM with capacity of 256K, 1M, and 4M
Author :
Alieva, N.V. ; Belous, A.I. ; Bondarenko, V.P. ; Dolgyi, L.N. ; Malyshev, V.S. ; Soroka, S.A. ; Turzevich, A.S. ; Shvedov, S.V.
Author_Institution :
“Integral” JSC, Minsk, Belarus
Abstract :
The issues of development and production of SOI CMOS VLS SRAM with information capacity of 256K, 1M and 4M, resistant to influence of external factors are considered.
Keywords :
CMOS memory circuits; SRAM chips; VLSI; channel capacity; silicon-on-insulator; SOI CMOS VLSI SRAM; information capacity; CMOS integrated circuits; Educational institutions; Electronic mail; Informatics; Microelectronics; Random access memory; Very large scale integration;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
