• DocumentCode
    2044226
  • Title

    Special purpose CMOS VLSI SRAM with capacity of 256K, 1M, and 4M

  • Author

    Alieva, N.V. ; Belous, A.I. ; Bondarenko, V.P. ; Dolgyi, L.N. ; Malyshev, V.S. ; Soroka, S.A. ; Turzevich, A.S. ; Shvedov, S.V.

  • Author_Institution
    “Integral” JSC, Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    932
  • Lastpage
    933
  • Abstract
    The issues of development and production of SOI CMOS VLS SRAM with information capacity of 256K, 1M and 4M, resistant to influence of external factors are considered.
  • Keywords
    CMOS memory circuits; SRAM chips; VLSI; channel capacity; silicon-on-insulator; SOI CMOS VLSI SRAM; information capacity; CMOS integrated circuits; Educational institutions; Electronic mail; Informatics; Microelectronics; Random access memory; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2044226