DocumentCode :
2044334
Title :
Zinc Oxide Phosphors Synthesized By Cathodic Electrodeposition
Author :
Huang, Yanwei ; Yao, Ning ; Zhang, Binglin
Author_Institution :
Dept. of Phys., Zhengzhou Univ.
fYear :
2006
fDate :
38899
Firstpage :
373
Lastpage :
374
Abstract :
Thin film of zinc oxide (ZnO) was electrodeposited from an aqueous solution of Zn(NO3)2 at 70degC on indium tin oxide (ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near UV emission peak located at 380 nm and a strong orange emission peak located at 593 nm are observed in the photoluminescence. Meanwhile, orange red cathode-luminescence was observed and brightness of the cathode-luminescence was enhanced by annealing
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; cathodoluminescence; electrodeposits; phosphors; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; texture; ultraviolet spectra; wide band gap semiconductors; zinc compounds; ITO; ITO-SiO2; InSnO-SiO2; SEM; UV emission; X-ray diffraction; XRD; ZnO; annealing; cathodic electrodeposition; cathodoluminescence; compact hexagonal wurtzite structure; indium tin oxide covered glass substate; orange emission; photoluminescence; preferable (002) growth direction; scanning electron microscopy; solution deposition; zinc oxide phosphors; Brightness; Electrons; Glass; Indium tin oxide; Phosphors; Photoluminescence; Substrates; Transistors; X-ray diffraction; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335224
Filename :
4134615
Link To Document :
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