Zinc Oxide Phosphors Synthesized By Cathodic Electrodeposition

Author

Huang, Yanwei ; Yao, Ning ; Zhang, Binglin

Author_Institution

Dept. of Phys., Zhengzhou Univ.

fYear

2006

fDate

38899

Firstpage

373

Lastpage

374

Abstract

Thin film of zinc oxide (ZnO) was electrodeposited from an aqueous solution of Zn(NO₃)₂ at 70degC on indium tin oxide (ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near UV emission peak located at 380 nm and a strong orange emission peak located at 593 nm are observed in the photoluminescence. Meanwhile, orange red cathode-luminescence was observed and brightness of the cathode-luminescence was enhanced by annealing

Keywords

II-VI semiconductors; X-ray diffraction; annealing; cathodoluminescence; electrodeposits; phosphors; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; texture; ultraviolet spectra; wide band gap semiconductors; zinc compounds; ITO; ITO-SiO₂; InSnO-SiO2; SEM; UV emission; X-ray diffraction; XRD; ZnO; annealing; cathodic electrodeposition; cathodoluminescence; compact hexagonal wurtzite structure; indium tin oxide covered glass substate; orange emission; photoluminescence; preferable (002) growth direction; scanning electron microscopy; solution deposition; zinc oxide phosphors; Brightness; Electrons; Glass; Indium tin oxide; Phosphors; Photoluminescence; Substrates; Transistors; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335224

Filename

4134615